DOI: https://doi.org/10.3103/S073527271310004X
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Formation of heterogeneous metal-semiconductor interface on the example of Au–Pd–Ti–Pd–n–AlN structure

Formation peculiarities and properties of ohmic contacts to n-GaN(AlN) and artificial diamond

Volodymyr Sheremet

Abstract


The paper considers ohmic contacts of Au–TiBx–Al–Ti–n–GaN, Au–Pd–Ti–Pd–n–AlN and Au–Pd–Ti–n–C to the promising for use in microelectronics wide-gap semiconductors. Ohmic contact formation takes place after sequential layering of metal with further fast thermal processing, which leads to solid-phase reactions between the semiconductor and metal. It is shown that the use of X-ray amorphous TiBx layer in ohmic contact as the diffusion barrier allows for creating thermal stability contacts up to T = 900 °C. Current flow in the considered ohmic contacts is described using a model with current flow along metal shunts considering diffusion limitation on the charge carrier supply.


Keywords


ohmic contact; contact resistivity; current flow mechanism; Oze spectroscopy; X-Ray diffractometry

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References


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