DOI: https://doi.org/10.3103/S0735272710080029
Open Access Open Access  Restricted Access Subscription Access

Terahertz self-induced oscillations in the injection p–n junction with fixed reverse bias

Konstantin A. Lukin, Pavlo P. Maksymov

Abstract


The results of numerical solutions of the complete equations of the diffusion-drift model (DDM) of Ge, Si and GaAs reverse-biased abrupt p–n junctions with injection of the constant-intensity electron flow into the p–region have been presented. The excitation mechanism of p–n junctions was examined and the factors affecting the frequency and amplitude of self-induced oscillations were established. The spectra of power and electron efficiency have been also presented. Abrupt Ge, Si and GaAs p–n junctions were shown to generate oscillations over the entire microwave range, while the second harmonic frequency could reach the terahertz (THz) range.


Keywords


abrupt p–n junction; terahertz range; spectra

Full Text:

PDF

References


N. S. Boltovets, V. N. Ivanov, A. E. Belyaev, et al., “Contacts with diffusion barriers based on the interstitial phases of TiN and Ti(Zp)Bx in microwave 250–350 GHz diodes,” Fizika i Tekhnika Poluprovodnikov 40, No. 6, 753 (2006).

A. S. Tager and V. M. Val’d-Perlov, IMPATT Diodes and Their Application in Microwave Technology (Sov. Radio, Moscow, 1968) [in Russian].

K. A. Lukin, H. A. Cerdeira, and P. P. Maksymov, Self-Oscillations in Reverse Biased p–n-Junction with Current Injection, Appl. Phys. Lett. 83, No. 20, 4643 (2003).

K. A. Lukin, H. A. Cerdeira, and P. P. Maksymov, “Terahertz self-oscillation in avalanche p–n-junction with DC current injection,” in Proc. of 6th Int. Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter and Submillimeter Waves (MSMW’7), June 25–30, 2007, Kharkov, Ukraine (Kharkov, 2007), Vol. 1, pp. 204–206.

K. A. Lukin and P. P. Maksymov, “The Modified Cross-Sweep Method,” Radiofiz. Elektron. 4, No. 1, 8 (1999).

K. A. Lukin and P. P. Maksymov, “Calculation Method of Semiconductor Structures with Abrupt p–n Junctions,” Radiofiz. Elektron. 4, No. 1, 87 (1999).

K. A. Lukin and P. P. Maksymov, “Calculation Method of Avalanching p–n Junctions in the Self-Oscillation Mode,” Radiofiz. Elektron. 10, No. 1, 109 (2005).

K. A. Lukin and P. P. Maksymov, “Static Electric Fields in Reverse-Biased pn–i–pn-Structures,” Radiofiz. Elektron. 7, No. 2, 317 (2002).

S. Sze, Physics of Semiconductor Devices (Wiley, New York, 1969; Mir, Moscow, 1984 [ed. by R. A. Suris]).

J. E. Karroll, Hot Electron Microwave Generators (Edward Arnold, London, 1970 ; Mir, Moscow, 1972 [ed. by V. L. Gel’mont]).

A. A. Samarskii and Yu. P. Popov, Difference Methods for Solving the Gas Dynamic Problems (Nauka, Moscow, 1980) [in Russian].

K. A. Lukin and P. P. Maksymov, “Self-Oscillation Mode in Abrupt p–n Junctions with Fixed Reverse Bias,” Radiofiz. Elektron. 13, No. 2, 232 (2008).

A. M. Prokhorov (Senior Ed.,) Encyclopedia of Physics, Vol. 2 (Moscow: Sov. Entsiklopediya, 1990) [in Russian].







© Radioelectronics and Communications Systems, 2004–2019
When you copy an active link to the material is required
ISSN 1934-8061 (Online), ISSN 0735-2727 (Print)
tel./fax +38044 204-82-31, 204-90-41