Specificities of temperature dependence of saturation current of forward-biased Shottkey diodes TiBx–n–6HSiC
DOI:
https://doi.org/10.3103/S0735272710010103Keywords:
Shottkey diodeAbstract
It is researched temperature dependences of forward branch of Shottkey diodes TiBx–n–6HSiC. It is detected that forward branch of voltage-current characteristic is described by exponential dependence for voltage interval of 0.05–0.4 V and temperature interval of 100–500 K. At that saturation current and characteristic energy are weakly dependent on temperature. It is shown that redundant component of silicon carbide Shottkey diodes has tunnel behavior, in spite of spatial charge region width into researched diodes is essentially greater than characteristic tunnel length.
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