Measurement of efficient thickness of transition layer, stimulated by microwave radiation, in contacts Mo-GaAs

Authors

  • A. B. Kamalov Combined Institute of Natural Sciences of the Karakalpak Branch of the Academy of Sciences of the Republic of Uzbekistan, Uzbekistan

DOI:

https://doi.org/10.3103/S0735272709100057

Abstract

Using method of Auger electronic spectroscopy, we experimentally research an influence of microwave treatment on efficient thickness modification in transition layer of Mo–GaAs contacts. It is shown that parameters of Schottky barriers (barriers height jВ and ideality factor n) are correlated with efficient thickness of transition layer after microwave treatment.

References

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Published

2009-10-05

Issue

Section

Research Articles