Parameters calculation of drift n-p-n transistors using their output characteristics

Authors

  • A. N. Frolov Kherson National Technical University, Ukraine
  • K. A. Frolov Kherson National Technical University, Ukraine
  • Ye. A. Baganov Kherson National Technical University, Ukraine

DOI:

https://doi.org/10.3103/S0735272709090027

Abstract

A methodology of estimating physical parameters of transistor’s structure in order to obtain the necessary set of its main electrical parameters is described. The suggested methodology is based on applying semi-empiric formulas, obtained by means of statistical processing of a large number of experimental data, and allows determining parameters of transistor’s structure with the best optimal combination of current gain, breakdown voltage and cutoff frequency. The methodology is proven by numerous experimental results.

References

S. Zee, Physics of Semiconductor Devices, Book 1 (Wiley, New York, 1981; Mir, Moscow, 1984).

R. S. Muller and T. I. Kamins, Device Electronics for Integrated Circuits (Wiley, New York, 1977; Mir, Moscow, 1989).

N. A. Samoilov, A. N. Frolov, and S. V. Shutov, “Operational estimate of the impurity concentration in the emitter in designing n–p–n drift transistors,” Tech. Phys. Lett. 22(4). 281 (1996).

N. А. Samoylov, А. N. Frolov, and S. V. Shutov, “Methodology of quick estimation of n-p-n transistor’s breakdown voltage,” Peterburgskii Zhurnal Radioelektroniki, No. 4, 42 (1996).

N. А. Samoylov, А. N. Frolov, and S. V. Shutov, “Breakdown voltages of p-n junctions in planar transistors,” Peterburgskii Zhurnal Radioelektroniki, No. 1, 44 (1999).

Silicon Planar Transistor (Sov. Radio, Moscow, 1973) [in Russian, ed. by Ya. А. Fedotov].

А. F.Trutko, Transistor Calculation Methods (Energiya, Moscow, 1971) [in Russian].

A. N. Frolov, S. V. Shutov, and A. M. Shershen, “Evaluation of the drift n–p–n–transistor base thickness by its gain factor,” Radioelectron. Commun. Syst. 44(12), 38 (2001).

I. E. Maronchuk, A. N. Frolov, and S. V. Shutov, “Determination of the base thickness of a drift transistor by “punch–through” voltage,” Radioelectron. Commun. Syst. 44(11), 46 (2001).

Published

2009-09-02

Issue

Section

Research Articles