Parameters calculation of drift n-p-n transistors using their output characteristics
A methodology of estimating physical parameters of transistor’s structure in order to obtain the necessary set of its main electrical parameters is described. The suggested methodology is based on applying semi-empiric formulas, obtained by means of statistical processing of a large number of experimental data, and allows determining parameters of transistor’s structure with the best optimal combination of current gain, breakdown voltage and cutoff frequency. The methodology is proven by numerous experimental results.
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