Modification of Au-Ti(W, Cr, TiBx)-GaAs contacts properties caused by external influences
DOI:
https://doi.org/10.3103/S073527270903008XAbstract
In this paper it is considered an influence of gamma-radiation 60Сo, microwave and ultrasonic processing on electro-physical properties and relaxation of internal stresses in Au–Ti(W, Cr, TiBx)–GaAs contacts, based on GaAs plate, containing n–n+ structures of GaAs. Correlation between radius of curvature of GaAs plates and contact parameters is detected. It is shown experimentally, that modification of electro-physical parameters of diodes with Schottky barrier, based on GaAs is specified by internal stresses relaxation in gallium arsenide structures with contacts.
References
O. Yu. Borkovskaya, N. L. Dmitruk, R. V. Konakova, et al., “Effects of Radiation Regulation in Laminated Structures Based on A3B5 Compounds,” Preprint No. 6, IF AN USSR (Institute of Physics National Academy of Sciences of Ukraine, Kiev, 1986).
O. Yu. Borkovskaya, N. L. Dmitruk, V. G. Litovchenko, and O. N. Mischuk, “About a Model of Radiation—Stimulated Regulation in A3B5 Semiconductors,” FTP 2, No. 23, 207 (1989).
Yu. A. Tkhorik, Structural Relaxation in Semiconductor Crystals and Semiconductor Structures (Phoenix, Kiev, 1994) [in Russian].
A. P. Mamontov and I. P. Chernov, Small Dose Ionizing Radiation Effect (Energoatomizdat, Moscow, 2001) [in Russian].
V. I. Shakhovtsov, “Research of Radiation Effects in Non-uniform Structures of Solid-State Electronics,” Doctoral Dissertation in Mathematics and Physics (IPF NANU, Kiev, 1993).
A. B. Kamalov, “Influence of Gamma and Microwave Irradiation on Electro-physical Characteristics of Diode Structures with Schottky Barrier Au–Ti–GaAs,” in Proceedings of 6th Int. Conf. “Interaction of Radiation and Solids,” Minsk, 28–30 September, 2005 (Minsk, 2005), pp. 375–377.
A. E. Belyaev, E. F. Venger, I. B. Ermolovich, et al., Effect of Microwave and Laser Radiation on the Parameters of Semiconductor Structures (Intas, Kiev, 2002).
Yu. V. Bykov, A. G. Yeremeev, V. I. Pashkov, et al., Dopant and Defects Gettering in Silicon Caused by SHF-Field Treatment, Available from VINITI, No. 2322-B91 (Nizhnii Novgorod, 1991).
Yu. V. Bykov, A. G. Yeremeev, N.A. Zharova, et al., “Diffusion Processes in Semiconductor Structures in Microwave Annealing,” Izv. Vyssh. Uchebn. Zaved., Radiofizika XLVI, Nos. 8–9, 836 (2003).
N. S. Boltovets, A. B. Kamalov, E. Yu. Kolyadina, et al., “Intrinsic Stress in Gallium Arsenide Device Structures Relaxation, Stimulated by Microwave Treatment,” Tech. Phys. Lett. 28, No. 4, 57 (2002).
A. B. Kamalov and Ya. M. Olikh, “Reversible Modifications of Electrophysical Parameters of Schottky Diodes Au–TiN–n–n+–GaAs with Help of Ultrasonic Treatment,” in Proceedings of 5th Int. Sci. Tech. Conf. “Microelectronics Transformers and Devices”, Baku, 5–9 December, 2005 (Baku, 2005), pp. 299–302.
