Influence of temperature on the characteristics of heterojunction bipolar transistor

Authors

  • L. I. Averina Voronezh State University, Russian Federation
  • Anatoly M. Bobreshov Voronezh State University, Russian Federation https://orcid.org/0000-0002-5429-3780
  • A. I. Kurashov Voronezh State University, Russian Federation

DOI:

https://doi.org/10.3103/S0735272708120030

Abstract

Using the noise low-signal model with the help of Volterra’s series apparatus the influence of temperature on non-linear, amplification and noise characteristics of a low-noise microwave amplifier on heterojunction bipolar transistor in various operation modes is analyzed. On the basis of the obtained data practical recommendations on choosing the transistor’s power source under various temperatures to optimize its work are given.

References

K.-M. Chen, A.-S. Peng, G.-W. Huang, et al., “Linearity and Power Characteristics of SiGe HBTs at High Temperatures for RF Applications,” IEEE Trans. Electron Devices 52, No. 7, 1452 (July 2005).

A. Khan, C. N. Dharmasiri, T. Miura, and A. A. Rezazadeh, “Thermal Characterization and Analysis of Two Tone Intermodulation Distortion in InGaP/GaAs DHBT,” in GaAs and Other Semiconductor Application Symp., October 3–4, 2005 (2005), pp. 209–212.

B. Banerjee, S. Venkataraman, C.-H. Lee, and J. Laskar, “Broadband Noise Modeling of SiGe HBT under Cryogenic Temperatures,” in Radio-Frequency Integrated Circuits Symp., IEEE, June 3–5, 2007 (2007), pp. 765–768.

B. М. Bogdanovich, Non-Linear Distortions in Transceiving Devices (Svyaz’, Moscow, 1980) [in Rusian].

Chee-Mun, A. Peter, and Ho-Kwang Yow, “Analysis of the Temperature Dependence of Current Gain in Heterojunction Bipolar Transistors,” IEEE Trans. Electron Devices 44, No. 1, 17 (January 1997).

Published

2008-12-03

Issue

Section

Research Articles