DOI: https://doi.org/10.3103/S073527270807008X
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Simulation of the forward voltage impact on the gain of a narrow-base transistor

S. L. Khrypko

Abstract


Equations have been derived that describe the effect of the forward emitter–base voltage of a bipolar narrow-base transistor on the current gain. The results make it possible to use the model for calculating the processes of charge transfer.


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References


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