DOI: https://doi.org/10.3103/S0735272708020040
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Effect of external actions on characteristics of gallium arsenide Schottky-barrier diode structures

A. B. Kamalov

Abstract


In this paper we analyze briefly literary information about an effect of external actions on electrophysical characteristics of gallium arsenide Schottky-barrier diode structures and their stability to external influences. We discussed radiation changes of gallium arsenide Schottky-barrier diode structures, and also we discuss effects of small radiation dose treatment.


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References


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