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Impact of heat treatment on resistivity of ohmic contacts in GaAs p-type monocrystals

Ye. P. Markovskii


The paper is devoted to inquiries in resistivity of ohmic contacts with heavily-doped semiconductor (2´1018 cm–3) made of p-type GaAs, in the case of many-layer structure of the contact — Au/TiBx/Ti. As shown by measurements, this ohmic system is competitive enough and has some advantages over other ohmic structures.

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