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Power semiconductor pulsers with injection locking for millimeter range of wavelengths

L. V. Kasatkin, V. P. Rukin

Abstract


The paper is devoted to design of power pulse semiconductor sources of electromagnetic oscillation in the millimeter range of wavelengths. When dealing with short pulses, most appropriate is application of silicon IMPATT diodes with optimal geometry and doping profile. The optimal area of semiconductor structure of the diode, corresponding to a maximum of power at permissible temperatures, is shown to depend on the pulse condition parameters and on the magnitude of ohmic resistance connected in series. Several methods of combining the diodes’ powers, most effective in the millimeter range of wavelengths, are considered. The paper shows the possibility of creating power pulsers in silicon IMPATT diodes designed for the pulse power of several hundred watts in the millimeter range.

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References


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DOI: https://doi.org/10.3103/S0735272705060014

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