DOI: https://doi.org/10.3103/S0735272704110093
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Parameter determination of the physical equivalent circuit for the dual-gate MESFET

N. A. Filinyuk, D. V. Gavrilov

Abstract


A new technique is suggested to determine the parameters of the physical equivalent circuit describing the metal-Schottky dual-gate field effect transistor. The method is based on measurement of the maximal stable gain factor of the transistor in different connection circuits.

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References


FILINYUK, N.A. "Opredelenie parametrov ekvivalentnoi skhemy aktivnoi oblasti kristalla polevogo tranzistora," Izv. VUZ. Radioelektronika, v.26, n.7, p.90-92, 1983.

MAN, G.S.F. "A microwave model for the dual-Gate GaAs MESFET," IEEE MTT-S Int. Microwave Symp. Dig., р.43-45, June 1981.

MATTHAEI, G.L.; YOUNG, L.; JONES, E.M.T. Microwave Filters, Impedance-Matching Networks, and Coupling Structures. McGraw-Hill, 1969.

FILINYUK, N.A.; PESKOV, S.N.; PAVLOV, N. "Parameter determination of physical equivalent circuit of HF transistors," Izv. VUZ. Radioelektronika, v.25, n.12, p.38-43, 1982.

FILINYUK, N.A. "Eksperimentalnoe opredelenie granichnoi chastoty aktivnoi oblasti kristalla polevogo tranzistora," Izv. VUZ. Radioelektronika, v.30, n.12, p.90-92, 1987.







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