Calculation of current-voltage characteristics of a single-electron transistor with continuous spectrum of energies in the island

Authors

  • V. I. Kanevskii Chungbuk National University, Cheongju, Korea, Republic of
  • K. N. Pak Chungbuk National University, Cheongju, Korea, Republic of

DOI:

https://doi.org/10.3103/S0735272704020049

Abstract

The paper contains the results of calculation of current-voltage characteristics of a single-electron transistor with continuous spectrum of energies based on the orthodox theory. The calculation of curves is carried out with the aid of the Monte-Carlo procedure.

References

AVERIN, D.V.; LIKHAREV, K.K. "Possible applications of the single charge tunneling," in H. Grabert and M. H. Devoret (eds.). Single Charge Tunneling. NATO ASI Series (Series B: Physics), Vol. 294. Springer, Boston, 1992. DOI: https://doi.org/10.1007/978-1-4757-2166-9_9.

NAKAJIMA, A.; FUTATSUGI, T.; KOSEMURA, K.; FUKANO, T.; YOKOYAMA, N. "Room temperature operation of Si single-electron memory with self-aligned floating dot gate," Proc. of Int. Electron Devices Meeting, 8-11 Dec. 1996, San Francisco, CA, USA. IEEE, 1996. DOI: https://doi.org/10.1109/IEDM.1996.554140.

LIKHAREV, K.K. "Correlated discrete transfer of single electrons in ultrasmall tunnel junctions," IBM J. Res. Develop., v.32, n.1, p.144-158, 1988. DOI: https://doi.org/10.1147/rd.321.0144.

ROY, S.A. "Simulation Tools for the Analysis of Single Electronic Systems," PhD Thesis. University of Glasgow, 1994.

JOVANOVIC, D.; LEBURTON, J.-P. "Self-consistent analysis of single-electron charging effects in quantum-dot nanostructures," Phys. Rev. B, v.49, n.11, p.7474-7483, 1994. DOI: https://doi.org/10.1103/PhysRevB.49.7474.

AMAKAWA, S.; MAJIMA, H.; FUKUI, H.; FUJISHIMA, M.; HOH, K. "Single-electron simulation," IEICE Trans. Electron., v.E81-C, n.1, p.21-29, 1998.

YU, Z.; DUTTON, R.W.; KIEHL, R.A. "Circuit/device modeling at the quantum level," IEEE Trans. Electron Devices, v.47, n.10, p.1819-1825, 2000. DOI: https://doi.org/10.1109/16.870554.

AMMAN, M.; MULLEN, K. "The charge-effect transistor," J. Appl. Phys., v.65, n.1, p.339-346, 1989. DOI: https://doi.org/10.1063/1.342546.

SCHOLZE, A.; SCHENK, A.; FICHTNER, W. "Single-electron device simulation," IEEE Trans. Electron Devices, v.47, n.10, p.1811-1818, 2000. DOI: https://doi.org/10.1109/16.870553.

LIKHAREV, K. "Single-electron transistors: Electrostatic analogs of the DC SQUIDS," IEEE Trans. Magnetics, v.23, n.2, p.1142-1145, 1987. DOI: https://doi.org/10.1109/TMAG.1987.1065001.

HANNA, A.E.; TINKHAM, M. "Variation of the Coulomb staircase in a two-junction system by fractional electron charge," Phys. Rev. B, v.44, n.11, p.5919-5922, 1991. DOI: https://doi.org/10.1103/PhysRevB.44.5919.

HIRVI, K.P.; PAALANEN, M.A.; PEKOLA, J.P. "Numerical investigation of one-dimensional tunnel junction arrays at temperatures above the Coulomb blockade regime," J. Appl. Phys., Vol. 80, No. 1, P. 256-263, 1996. DOI: https://doi.org/10.1063/1.362813.

KIM, J.-J.; LEE, J.-O.; KIM, J.; YOO, K.H.; PARK, J.W.; CHOI, J.B. "Charge transfer study of aluminum-based single electron transistors fabricated by using a controlled anodization technique," J. Korean Phys. Soc., v.33, n.6, p.750-754, 1998.

Published

2004-01-14

Issue

Section

Research Articles